1. (Invited) Challenges on Surface Conditioning in 3D Device Architectures: Triple-Gate FinFETs, Gate-All-Around Lateral and Vertical Nanowire FETs. (15th August 2017) Authors: Veloso, Anabela; Paraschiv, Vasile; Vecchio, Emma; Devriendt, Katia; Li, Waikin; Simoen, Eddy; Chan, B. T.; Tao, Zheng; Rosseel, Erik; Loo, Roger; Milenin, Alexey P.; Kunert, Bernardette; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; van Dorp, Dennis; Altamirano-Sánchez, Efraín; Brus, Stepha... Journal: ECS transactions Issue: Volume 80:Number 2(2017) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Gate-All-Around Nanosheet Field-Effect Transistors for Advanced Logic and Memory Applications: Integration and Device Features. (24th April 2020) Authors: Veloso, Anabela; Matagne, Philippe; Eneman, Geert; Mertens, Hans; Chasin, Adrian; Simoen, Eddy; Horiguchi, Naoto Journal: ECS transactions Issue: Volume 97:Number 1(2020) Page Start: 23 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. (Invited) Gate-All-Around Nanowire FETs vs. Triple-Gate FinFETs: On Gate Integrity and Device Characteristics. (26th April 2016) Authors: Veloso, Anabela; Cho, Moon Ju; Simoen, Eddy; Hellings, Geert; Matagne, Philippe; Collaert, Nadine; Thean, Aaron Journal: ECS transactions Issue: Volume 72:Number 2(2016) Page Start: 85 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. (Invited) Stress Simulations of Fins, Wires, and Nanosheets. (8th September 2020) Authors: Eneman, Geert; Veloso, Anabela; Favia, Paola; Hikavyy, Andriy Yakovitch; Porret, Clement; Arimura, Hiroaki; De Keersgieter, An; Pourtois, Geoffrey; Loo, Roger; Spessot, Alessio; Matagne, Philippe; Ryckaert, J.; Horiguchi, Naoto Journal: ECS transactions Issue: Volume 98:Number 5(2020) Page Start: 253 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. (Invited) Vertical Nanowire FET Integration and Device Aspects. (4th May 2016) Authors: Veloso, Anabela; Altamirano-Sánchez, Efraín; Brus, Stephan; Chan, B. T.; Cupak, Miroslav; Dehan, Morin; Delvaux, Christie; Devriendt, Katia; Eneman, Geert; Ercken, Monique; Huynh-Bao, Trong; Ivanov, Tsvetan; Matagne, Philippe; Merckling, Clement; Paraschiv, Vasile; Ramesh, Siva; Rosseel, Erik; Ry... Journal: ECS transactions Issue: Volume 72:Number 4(2016) Page Start: 31 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. (Keynote) Gate-All-Around Nanowire & Nanosheet FETs for Advanced, Ultra-Scaled Technologies. (24th April 2020) Authors: Veloso, Anabela; Matagne, Philippe; Jang, Doyoung; Huynh-Bao, Trong; Chasin, Adrian; Simoen, Eddy; Eneman, Geert; De Keersgieter, An; Mertens, Hans; Horiguchi, Naoto Journal: ECS transactions Issue: Volume 97:Number 5(2020) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. From the metal to the channel: a study of carrier injection through the metal/2D MoS2 interface. Issue 30 (21st July 2017) Authors: Arutchelvan, Goutham; Lockhart de la Rosa, César J.; Matagne, Philippe; Sutar, Surajit; Radu, Iuliana; Huyghebaert, Cedric; De Gendt, Stefan; Heyns, Marc Journal: Nanoscale Issue: Volume 9:Issue 30(2017) Page Start: 10869 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs. (February 2023) Authors: Simoen, Eddy; Veloso, Anabela; Matagne, Philippe; Claeys, Cor Journal: Solid-state electronics Issue: Volume 200(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Impact of the channel doping on the low-frequency noise of silicon vertical nanowire pFETs. (August 2022) Authors: Simoen, Eddy; Veloso, Anabela; Matagne, Philippe; Claeys, Cor Journal: Solid-state electronics Issue: Volume 194(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire MOSFETs with bulk source contact. (May 2022) Authors: Simoen, Eddy; Veloso, Anabela; Matagne, Philippe Journal: Solid-state electronics Issue: Volume 191(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗