1. Al modification as indicator of current filaments in IGBTs under repetitive SC operation. Issue 15 (1st December 2019) Authors: Mysore, Madhu Lakshman; Bhojani, Riteshkumar; Kowalsky, Jens; Lutz, Josef; Baburske, Roman; Schulze, Hans‐Joachim; Niedernostheide, Franz‐Josef Journal: IET power electronics Issue: Volume 12:Issue 15(2019) Page Start: 3893 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Gallium arsenide semiconductor parameters extracted from pin diode measurements and simulations. Issue 4 (1st March 2016) Authors: Bhojani, Riteshkumar; Kowalsky, Jens; Simon, Tom; Lutz, Josef Journal: IET power electronics Issue: Volume 9:Issue 4(2016) Page Start: 689 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Improving the short circuit ruggedness of IGBTs. (September 2016) Authors: Tinschert, Lukas; Hernes, Magnar; Lutz, Josef Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 519 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Improving the short circuit ruggedness of IGBTs. (September 2016) Authors: Tinschert, Lukas; Hernes, Magnar; Lutz, Josef Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 519 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Influence of power cycling ageing on the current and voltage transitions during hard switching of IGBT devices. (July 2021) Authors: Deng, Erping; Liu, Xing; Seidel, Peter; Chen, Jie; Lutz, Josef Journal: Microelectronics and reliability Issue: Volume 122(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Possible failure modes in Press-Pack IGBTs. Issue 6 (May 2015) Authors: Tinschert, Lukas; Årdal, Atle Rygg; Poller, Tilo; Bohlländer, Marco; Hernes, Magnar; Lutz, Josef Journal: Microelectronics and reliability Issue: Volume 55:Issue 6(2015) Page Start: 903 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Reliability and reliability investigation of wide-bandgap power devices. (September 2018) Authors: Lutz, Josef; Franke, Jörg Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 550 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Requirements in power cycling for precise lifetime estimation. (March 2016) Authors: Herold, Christian; Franke, Jörg; Bhojani, Riteshkumar; Schleicher, Andre; Lutz, Josef Journal: Microelectronics and reliability Issue: Volume 58(2016) Page Start: 82 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Semiconductor power devices : physics, characteristics, reliability /: physics, characteristics, reliability. ([2018]) Authors: Lutz, Josef; Schlangenotto, Heinrich; Scheuermann, Uwe; Doncker, Rik De Record Type: Book Extent: 1 online resource View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Switching ruggedness and surge‐current capability of diodes using the self‐adjusting p emitter efficiency diode concept. Issue 3 (1st May 2014) Authors: Basler, Thomas; Pfaffenlehner, Manfred; Felsl, Hans Peter; Niedernostheide, Franz‐Josef; Pfirsch, Frank; Schulze, Hans‐Joachim; Baburske, Roman; Lutz, Josef Journal: IET circuits, devices & systems Issue: Volume 8:Issue 3(2014) Page Start: 205 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗