Switching ruggedness and surge‐current capability of diodes using the self‐adjusting p emitter efficiency diode concept. Issue 3 (1st May 2014)

• Record Type: Journal Article
• Authors: Basler, Thomas; Pfaffenlehner, Manfred; Felsl, Hans Peter; Niedernostheide, Franz‐Josef; Pfirsch, Frank; Schulze, Hans‐Joachim; Baburske, Roman; Lutz, Josef
• Is Part Of: IET circuits, devices & systems. Volume 8:Issue 3(2014)
• Page Start: 205
• Page End: 212
• Publication Date: 2014-05-01
• Subjects: semiconductor diodes -- semiconductor device models -- semiconductor device reliability -- power semiconductor switches; diode switching ruggedness -- diode surge current capability -- self-adjusting p emitter efficiency diode concept -- free wheeling diodes -- SPEED -- cathode side filaments -- reverse recovery -- controlled injection -- backside holes -- high electrical field strength -- p+p-junction -- anode side filament pinning; Electronic circuits -- Periodicals; Electronic systems -- Periodicals; 621.381505
• DOI: 10.1049/iet-cds.2013.0216
• Languages: English
• ISSNs: 1751-858X

Abstract

Abstract : The surge‐current ruggedness of free‐wheeling diodes can be improved by implementing the self‐adjusting p emitter efficiency diode concept (SPEED). Simulations indicate that the switching ruggedness is reduced because of the occurrence of cathode‐side filaments during reverse‐recovery. Experiments confirm the weak switching performance of such a diode in comparison to a conventional diode. By implementing the controlled injection of backside holes concept cathode‐side filaments can be suppressed. However, this measure is not sufficient to regain the switching ruggedness of a conventional diode. It is also necessary to fully embed the p + ‐areas of the SPEED anode in the low‐doped p‐type area to avoid high electrical field strengths at the p + p‐junction and pinning of anode‐side filaments. However, anode‐side adjustments for improving the switching ruggedness can reduce the benefit of the SPEED concept regarding the surge‐current capability.