1. Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance. (3rd June 2021) Authors: Sun, Chong-Jhe; Yan, Siao-Cheng; Lin, Yi-Wen; Tsai, Meng-Ju; Tsai, Yu-Chen; Chou, Chuan-Pu; Hou, Fu-Ju; Luo, Guang-Li; Wu, Yung-Chun Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 6(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Fully Depleted GeOI-Channel Junctionless pMOSFET with a Low-Resistance-Raised NiGe Alloy S/D. (1st January 2017) Authors: Lee, Wei-Li; Hsu, Chung-Chun; Chung, Cheng-Ting; Lu, Yu-Hung; Luo, Guang-Li; Chien, Chao-Hsin Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 8(2017) Page Start: P507 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Fully Depleted GeOI-Channel Junctionless pMOSFET with a Low-Resistance-Raised NiGe Alloy S/D. (28th June 2017) Authors: Lee, Wei-Li; Hsu, Chung-Chun; Chung, Cheng-Ting; Lu, Yu-Hung; Luo, Guang-Li; Chien, Chao-Hsin Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 8(2017) Page Start: P507 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Study of High-Ge-Content Si0.16Ge0.84 Gate Stack by Low Pressure Oxidation. (1st January 2018) Authors: Lee, Wei-Li; Zhang, Jun-Lin; Tsai, Ming-Li; Wang, Shin-Yuan; Luo, Guang-Li; Chien, Chao-Hsin Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 2(2018) Page Start: P73 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Study of High-Ge-Content Si0.16Ge0.84 Gate Stack by Low Pressure Oxidation. (23rd January 2018) Authors: Lee, Wei-Li; Zhang, Jun-Lin; Tsai, Ming-Li; Wang, Shin-Yuan; Luo, Guang-Li; Chien, Chao-Hsin Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 2(2018) Page Start: P73 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Two dimensional hole gas (2DHG) germanium junctionless P-FinFETs without impurity scattering achieved by modulation doping in channel. (24th July 2017) Authors: Chu, Chun-Lin; Chen, Bo-Yuan; Chen, Szu-Hung; Luo, Guang-Li; Wu, Wen-Fa; Yeh, Wen-Kuan Journal: Semiconductor science and technology Issue: Volume 32:Number 8(2017:Aug.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗