Author/Creator: Luo, Guang-Li - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Luo, Guang-Li

1. Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance. (3rd June 2021)

Authors:: Sun, Chong-Jhe; Yan, Siao-Cheng; Lin, Yi-Wen; Tsai, Meng-Ju; Tsai, Yu-Chen; Chou, Chuan-Pu; Hou, Fu-Ju; Luo, Guang-Li; Wu, Yung-Chun
Journal:: ECS journal of solid state science and technology
Issue:: Volume 10:Number 6(2021)
Page Start:
Record Type:: Journal Article
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2. Fully Depleted GeOI-Channel Junctionless pMOSFET with a Low-Resistance-Raised NiGe Alloy S/D. (1st January 2017)

Authors:: Lee, Wei-Li; Hsu, Chung-Chun; Chung, Cheng-Ting; Lu, Yu-Hung; Luo, Guang-Li; Chien, Chao-Hsin
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 8(2017)
Page Start:: P507
Record Type:: Journal Article
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3. Fully Depleted GeOI-Channel Junctionless pMOSFET with a Low-Resistance-Raised NiGe Alloy S/D. (28th June 2017)

Authors:: Lee, Wei-Li; Hsu, Chung-Chun; Chung, Cheng-Ting; Lu, Yu-Hung; Luo, Guang-Li; Chien, Chao-Hsin
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 8(2017)
Page Start:: P507
Record Type:: Journal Article
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4. Study of High-Ge-Content Si0.16Ge0.84 Gate Stack by Low Pressure Oxidation. (1st January 2018)

Authors:: Lee, Wei-Li; Zhang, Jun-Lin; Tsai, Ming-Li; Wang, Shin-Yuan; Luo, Guang-Li; Chien, Chao-Hsin
Journal:: ECS journal of solid state science and technology
Issue:: Volume 7:Number 2(2018)
Page Start:: P73
Record Type:: Journal Article
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5. Study of High-Ge-Content Si0.16Ge0.84 Gate Stack by Low Pressure Oxidation. (23rd January 2018)

Authors:: Lee, Wei-Li; Zhang, Jun-Lin; Tsai, Ming-Li; Wang, Shin-Yuan; Luo, Guang-Li; Chien, Chao-Hsin
Journal:: ECS journal of solid state science and technology
Issue:: Volume 7:Number 2(2018)
Page Start:: P73
Record Type:: Journal Article
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6. Two dimensional hole gas (2DHG) germanium junctionless P-FinFETs without impurity scattering achieved by modulation doping in channel. (24th July 2017)

Authors:: Chu, Chun-Lin; Chen, Bo-Yuan; Chen, Szu-Hung; Luo, Guang-Li; Wu, Wen-Fa; Yeh, Wen-Kuan
Journal:: Semiconductor science and technology
Issue:: Volume 32:Number 8(2017:Aug.)
Page Start:
Record Type:: Journal Article
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