Comprehensive Study of Inversion and Junctionless Ge Nanowire Ferroelectric HfZrO Gate-All-Around FETs Featuring Steep Subthreshold Slope with Transient Negative Capacitance. (3rd June 2021)

• Record Type: Journal Article
• Authors: Sun, Chong-Jhe; Yan, Siao-Cheng; Lin, Yi-Wen; Tsai, Meng-Ju; Tsai, Yu-Chen; Chou, Chuan-Pu; Hou, Fu-Ju; Luo, Guang-Li; Wu, Yung-Chun
• Is Part Of: ECS journal of solid state science and technology. Volume 10:Number 6(2021)
• Publication Date: 2021-06-03
• Subjects: Transient negative capacitance (TNC) -- Steep subthreshold slope -- ferroelectric -- GAAFET -- surface potential amplification -- hafnium zirconium oxide (HZO) -- junctionless FET (JLFET); Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac04f8
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : This study reports the ferroelectric (FE) layer of Hf0.5 Zr0.5 O2 (HZO) film on a Ge gate-all-around field-effect-transistor (GAAFET) with inversion mode (IM) and junctionless (JL) mode, and is the first that discuss the association of the JL field-effect transistor conduction mechanism in the subthreshold region with the transient negative capacitance (TNC) effect of the FE layer are discussed. The IM Ge FE-GAAFET exhibited a minimum subthreshold slope (SSmin ) of 55 mV dec −1 and a high ION /IOFF ratio of >10 6 . The sub-60 mV dec −1 SS result demonstrates surface potential amplification, which is attributed to the TNC effect. Furthermore, the Ge JL FE-GAAFETs exhibited an SSmin of 58 mV dec −1, a high ION /IOFF ratio (>10 5 ), and reverse drain-induced barrier lowering when compared with baseline HfO2 devices. These IM and JL Ge FE-GAAFETs are highly suitable for low-power integrated circuit applications.