1. Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels. (2nd November 2016) Authors: Gupta, Chirag; Chan, Silvia H.; Lund, Cory; Agarwal, Anchal; Koksaldi, Onur S.; Liu, Junquian; Enatsu, Yuuki; Keller, Stacia; Mishra, Umesh K. Journal: Applied physics express Issue: Volume 9:Number 12(2016:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates. (17th October 2017) Authors: Lund, Cory; Hestroffer, Karine; Hatui, Nirupam; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia Journal: Applied physics express Issue: Volume 10:Number 11(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. InGaN lattice constant engineering via growth on (In, Ga)N/GaN nanostripe arrays. (1st September 2015) Authors: Keller, Stacia; Lund, Cory; Whyland, Tyler; Hu, Yanling; Neufeld, Carl; Chan, Silvia; Wienecke, Steven; Wu, Feng; Nakamura, Shuji; Speck, James S; DenBaars, Steven P; Mishra, Umesh K Journal: Semiconductor science and technology Issue: Volume 30:Number 10(2015:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD. (9th August 2018) Authors: Lund, Cory; Agarwal, Anchal; Romanczyk, Brian; Mates, Thomas; Nakamura, Shuji; DenBaars, Steven P; Mishra, Umesh K; Keller, Stacia Journal: Semiconductor science and technology Issue: Volume 33:Number 9(2018:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistors. Issue 4 (3rd December 2015) Authors: Li, Wenjun; Cao, Lina; Lund, Cory; Keller, Stacia; Fay, Patrick Journal: Physica status solidi Issue: Volume 213:Issue 4(2016:Apr.) Page Start: 905 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016). Issue 4 (April 2016) Authors: Hestroffer, Karine; Lund, Cory; Li, Haoran; Keller, Stacia; Speck, James S.; Mishra, Umesh K. Journal: Physica status solidi Issue: Volume 253:Issue 4(2016) Page Start: 792 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades. Issue 4 (26th February 2016) Authors: Hestroffer, Karine; Lund, Cory; Li, Haoran; Keller, Stacia; Speck, James S.; Mishra, Umesh K. Journal: Physica status solidi Issue: Volume 253:Issue 4(2016) Page Start: 626 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells. (1st September 2015) Authors: Hestroffer, Karine; Wu, Feng; Li, Haoran; Lund, Cory; Keller, Stacia; Speck, James S; Mishra, Umesh K Journal: Semiconductor science and technology Issue: Volume 30:Number 10(2015:Oct.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Review—The Physics of Recombinations in III-Nitride Emitters. (13th December 2019) Authors: David, Aurelien; Young, Nathan G.; Lund, Cory; Craven, Michael D. Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 1(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Review—The Physics of Recombinations in III-Nitride Emitters. (1st January 2020) Authors: David, Aurelien; Young, Nathan G.; Lund, Cory; Craven, Michael D. Journal: ECS journal of solid state science and technology Issue: Volume 9:Number 1(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗