Review—The Physics of Recombinations in III-Nitride Emitters. (13th December 2019)

• Record Type: Journal Article
• Authors: David, Aurelien; Young, Nathan G.; Lund, Cory; Craven, Michael D.
• Is Part Of: ECS journal of solid state science and technology. Volume 9:Number 1(2020)
• Publication Date: 2019-12-13
• Subjects: Luminescence -- Semiconductors -- Semiconductors - III-V -- efficiency -- gallium nitride -- light emitting diode; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0372001JSS
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The physics of carrier recombinations in III-nitride light emitters are reviewed, with an emphasis on experimental investigations. After a discussion of various methods of measuring recombination dynamics, important results on recombination physics are examined. The radiative rate displays a complex behavior, influenced by Coulomb interaction and carrier screening. Non-radiative recombinations at low and high current are shown to scale with the overlap of electron-hole wavefunctions, similarly to the radiative rate, leading to a compensation effect which explains the high efficiency of III-nitride emitters. Finally, the droop current is decomposed into two contributions: the well-known Auger scattering, and a defect-assisted droop process, which is shown to play an important role in the green gap.