InGaN lattice constant engineering via growth on (In, Ga)N/GaN nanostripe arrays. (1st September 2015)

• Record Type: Journal Article
• Authors: Keller, Stacia; Lund, Cory; Whyland, Tyler; Hu, Yanling; Neufeld, Carl; Chan, Silvia; Wienecke, Steven; Wu, Feng; Nakamura, Shuji; Speck, James S; DenBaars, Steven P; Mishra, Umesh K
• Is Part Of: Semiconductor science and technology. Volume 30:Number 10(2015:Oct.)
• Publication Date: 2015-09-01
• Subjects: indium gallium nitride -- strain -- nanostructures -- defects -- luminescence -- gratings; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/10/105020
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Planar (In, Ga)N layers were grown on nanostripe arrays composed of InGaN/GaN multi quantum wells (MQWs) by metal–organic chemical vapor deposition. The MQW nanostripe arrays with height to width aspect ratios of about 0.5 and 1 were fabricated from planar coherently strained InGaN/GaN MQW samples. Independent of their aspect ratio, the nanostripes exhibited elastic relaxation perpendicular to the stripe direction after pattern fabrication, resulting in an a ⊥ lattice constant perpendicular to the stripe direction larger than that of the GaN base layer. In a subsequent step, (In, Ga)N layers were grown on top of the nanostripe arrays, leading to the formation of planar films with a similar a ⊥ lattice constant as the MQW stripes beneath. Bright luminescence was recorded from the planar, partially relaxed re-grown (In, Ga)N layers grown on the stripe arrays with an aspect ratio of 1. Plastic relaxation of the MQW stripes was observed after (In, Ga)N regrowth for samples with a stripe aspect ratio of 0.5, leading to luminescence quenching.