1. Carbon-Related Defects in Si:C/Silicon Heterostructures Assessed by Deep-Level Transient Spectroscopy. (1st January 2017) Authors: Simoen, E.; Dhayalan, S. K.; Hikavyy, A.; Loo, R.; Rosseel, E.; Vrielinck, H.; Lauwaert, J. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 5(2017) Page Start: P284 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Carbon-Related Defects in Si:C/Silicon Heterostructures Assessed by Deep-Level Transient Spectroscopy. (4th April 2017) Authors: Simoen, E.; Dhayalan, S. K.; Hikavyy, A.; Loo, R.; Rosseel, E.; Vrielinck, H.; Lauwaert, J. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 5(2017) Page Start: P284 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors. Issue 11 (25th July 2014) Authors: Bühler, R.; Eneman, G.; Favia, P.; Bender, H.; Vincent, B.; Hikavyy, A.; Loo, R.; Martino, J. A.; Claeys, C.; Simoen, E.; Collaert, N.; Thean, A.; Pizzini, Sergio; Kissinger, Gudrun Journal: Physica status solidi Issue: Volume 11:Issue 11/12(2014) Page Start: 1578 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (1st January 2018) Authors: Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 2(2018) Page Start: P66 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Editors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures. (20th January 2018) Authors: Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 7:Number 2(2018) Page Start: P66 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes. (August 2015) Authors: Baert, B.; Gupta, S.; Gencarelli, F.; Loo, R.; Simoen, E.; Nguyen, N.D. Journal: Solid-state electronics Issue: Volume 110(2015) Page Start: 65 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Epitaxial Ge-on-Nothing and Epitaxial Ge on Si-on-Nothing as Virtual Substrates for 3D Device Stacking Technologies. (12th August 2021) Authors: Loo, R.; Porret, C.; Han, H.; Srinivasan, A.; Vecchio, E.; Depauw, V. Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 8(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration. (13th January 2021) Authors: Loo, R.; Jourdain, A.; Rengo, G.; Porret, C.; Hikavyy, A.; Liebens, M.; Becker, L.; Storck, P.; Beyer, G.; Beyne, E. Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Processing Technologies for Advanced Ge Devices. (1st January 2017) Authors: Loo, R.; Hikavyy, A. Y.; Witters, L.; Schulze, A.; Arimura, H.; Cott, D.; Mitard, J.; Porret, C.; Mertens, H.; Ryan, P.; Wall, J.; Matney, K.; Wormington, M.; Favia, P.; Richard, O.; Bender, H.; Thean, A.; Horiguchi, N.; Mocuta, D.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 1(2017) Page Start: P14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Processing Technologies for Advanced Ge Devices. (5th December 2016) Authors: Loo, R.; Hikavyy, A. Y.; Witters, L.; Schulze, A.; Arimura, H.; Cott, D.; Mitard, J.; Porret, C.; Mertens, H.; Ryan, P.; Wall, J.; Matney, K.; Wormington, M.; Favia, P.; Richard, O.; Bender, H.; Thean, A.; Horiguchi, N.; Mocuta, D.; Collaert, N. Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 1(2017) Page Start: P14 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗