1. Ballistic modeling of InAs nanowire transistors. (January 2016) Authors: Jansson, Kristofer; Lind, Erik; Wernersson, Lars-Erik Journal: Solid-state electronics Issue: Volume 115 Part A(2016) Page Start: 47 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs. (September 2020) Authors: Hellenbrand, Markus; Lind, Erik; Kilpi, Olli-Pekka; Wernersson, Lars-Erik Journal: Solid-state electronics Issue: Volume 171(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. High frequency III–V nanowire MOSFETs. (25th August 2016) Authors: Lind, Erik Journal: Semiconductor science and technology Issue: Volume 31:Number 9(2016:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. III–V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications. (19th May 2020) Authors: Lindelöw, Fredrik; Sri Garigapati, Navya; Södergren, Lasse; Borg, Mattias; Lind, Erik Journal: Semiconductor science and technology Issue: Volume 35:Number 6(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors. (23rd August 2018) Authors: Memisevic, Elvedin; Svensson, Johannes; Lind, Erik; Wernersson, Lars-Erik Journal: Nanotechnology Issue: Volume 29:Number 43(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Is What You See What You Get? Perceptions of Personal Trainers' Competence, Knowledge, and Preferred Sex of Personal Trainer Relative to Physique. Issue 7 (July 2021) Authors: Boerner, Patrick R.; Polasek, Katherine M.; True, Larissa; Lind, Erik; Hendrick, Joy L. Journal: Journal of strength and conditioning research Issue: Volume 35:Issue 7(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Junctionless tri-gate InGaAs MOSFETs. (9th November 2017) Authors: Zota, Cezar B.; Borg, Mattias; Wernersson, Lars-Erik; Lind, Erik Journal: Japanese journal of applied physics Issue: Volume 56:Number 12(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Low temperature atomic hydrogen annealing of InGaAs MOSFETs. (15th March 2023) Authors: Olausson, Patrik; Yadav, Rohit; Timm, Rainer; Lind, Erik Journal: Semiconductor science and technology Issue: Volume 38:Number 5(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Optimization of Near‐Surface Quantum Well Processing. Issue 7 (1st February 2021) Authors: Olausson, Patrik; Södergren, Lasse; Borg, Mattias; Lind, Erik Journal: Physica status solidi Issue: Volume 218:Issue 7(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Oxygen relocation during HfO2 ALD on InAs. (4th May 2022) Authors: D'Acunto, Giulio; Kokkonen, Esko; Shayesteh, Payam; Boix, Virginia; Rehman, Foqia; Mosahebfard, Zohreh; Lind, Erik; Schnadt, Joachim; Timm, Rainer Journal: Faraday discussions Issue: Volume 236(2022) Page Start: 71 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗