Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors. (23rd August 2018)

• Record Type: Journal Article
• Authors: Memisevic, Elvedin; Svensson, Johannes; Lind, Erik; Wernersson, Lars-Erik
• Is Part Of: Nanotechnology. Volume 29:Number 43(2018)
• Publication Date: 2018-08-23
• Subjects: TFET -- nanowires -- III-V -- InAs -- GaSb -- InGaAsSb -- steep-slope; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aad949
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: In this paper, we analyze experimental data from state-of-the-art vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors (TFETs) to study the influence of source doping on their performance. Overall, the doping level impacts both the off-state and on-state performance of these devices. Separation of the doping from the heterostructure improved the subthreshold swing of the devices. The best devices reached a point subthreshold swing of 30 mV/dec at 100 x higher currents than previous Si-based TFETs. However, separation of doping from the heterostructure had a significant impact on the on-state performance of these devices due to effects related to source depletion. An increase in the doping level helped to improve the on-state performance, which also increased the subthreshold swing. Thus, further optimization of doping incorporation with the heterostructure will help to improve vertical InAs/InGaAsSb/GaSb nanowire TFETs.