Author/Creator: Liao, Fengbo - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Liao, Fengbo

1. 2.57GW/cm2 normally-off composite stepped gate GaN-based HEMT with p-GaN buried layer and field plate. (January 2023)

Authors:: Li, Jialin; Yin, Yian; Liao, Fengbo; Lian, Mengxiao; Zhang, Xichen; Zhang, Keming; Xie, Yafang; Wu, You; Zou, Bingzhi; Zhang, Zhixiang; Li, Jingbo
Journal:: Materials science in semiconductor processing
Issue:: Volume 153(2023)
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Record Type:: Journal Article
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2. A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation. (20th August 2021)

Authors:: Li, Jialin; Yin, Yian; Zeng, Ni; Liao, Fengbo; Lian, Mengxiao; Zhang, Xichen; Zhang, Keming; Zhang, Yong; Li, Jingbo
Journal:: Semiconductor science and technology
Issue:: Volume 36:Number 9(2021)
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Record Type:: Journal Article
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3. Investigations on deep ultraviolet light-emitting diodes with quaternary AlInGaN streamlined quantum barriers for reducing polarization effect. (September 2020)

Authors:: Li, Kai; Zeng, Ni; Liao, Fengbo; Yin, YiAn
Journal:: Superlattices and microstructures
Issue:: Volume 145(2020)
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Record Type:: Journal Article
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4. Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate. (January 2022)

Authors:: Li, Jialin; Yin, Yian; Zeng, Ni; Liao, Fengbo; Lian, Mengxiao; Zhang, Xichen; Zhang, Keming; Li, Jingbo
Journal:: Superlattices and microstructures
Issue:: Volume 161(2022)
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Record Type:: Journal Article
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5. Polarization doping modulated heterojunction electron gas in AlGaN/GaN CAVETs. (13th August 2020)

Authors:: Zeng, Ni; Yin, Yi'an; Li, Kai; Liao, Fengbo; Huang, Huolin
Journal:: Semiconductor science and technology
Issue:: Volume 35:Number 9(2020)
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Record Type:: Journal Article
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