A dual-gate and Γ-type field plate GaN base E-HEMT with high breakdown voltage on simulation investigation. (20th August 2021)

• Record Type: Journal Article
• Authors: Li, Jialin; Yin, Yian; Zeng, Ni; Liao, Fengbo; Lian, Mengxiao; Zhang, Xichen; Zhang, Keming; Zhang, Yong; Li, Jingbo
• Is Part Of: Semiconductor science and technology. Volume 36:Number 9(2021)
• Publication Date: 2021-08-20
• Subjects: enhanced mode HEMT (E-HEMT) -- high breakdown voltage -- dual-gate -- Γ-type field plate; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac1963
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: This paper proposes to insert a buried P-type gate (BPT gate) under the channel layer of the recessed MIS-high electron mobility transistor (HEMT) to form a dual-gate HEMT. And through simulation calculation, the device performance is calculated and the working mechanism of the BPT gate is explained in detail. Compared with a conventional AlGaN/AlN/GaN HEMT and a gate-recessed MIS-HEMT, the dual-gate HEMT has a higher breakdown voltage (1126 V) and a larger threshold voltage (1.5 V). The results show that inserting a BPT gate in a gate-recessed MIS-HEMT can increase the threshold voltage and improve the breakdown characteristics. Through the optimization of the device structure, it is found that the combination of the MIS-gate and the Γ-type field plate based on the dual-gate device can obtain a higher breakdown voltage. Its breakdown voltage can reach 3041 V, and the figure of merit is as high as 3.56 GW cm −2 . This reveals that the combination of dual-gate and Γ-type field plate has great potential in the manufacture of enhancement-mode and high-voltage power transistors.