Investigations on deep ultraviolet light-emitting diodes with quaternary AlInGaN streamlined quantum barriers for reducing polarization effect. (September 2020)
- Record Type:
- Journal Article
- Title:
- Investigations on deep ultraviolet light-emitting diodes with quaternary AlInGaN streamlined quantum barriers for reducing polarization effect. (September 2020)
- Main Title:
- Investigations on deep ultraviolet light-emitting diodes with quaternary AlInGaN streamlined quantum barriers for reducing polarization effect
- Authors:
- Li, Kai
Zeng, Ni
Liao, Fengbo
Yin, YiAn - Abstract:
- Abstract: The characteristics of AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs) with quaternary AlInGaN streamlined quantum barriers (QBs) are investigated in this paper. The simulated results show that the light output power and the internal quantum efficiency (IQE) of deep UV LEDs with AlInGaN streamlined QBs have been improved obviously, and the efficiency droop effect has been significantly alleviated. After in-depth study, it is shown that quaternary AlInGaN streamlined QBs is designed to reduce the polarization charge density between quantum wells (QWs) and QBs, and relieve band bending. In addition, the streamline barrier can reduce the kinetic energy of injected carriers, and improve the probability of the carriers being bounced back to the quantum wells, so as to enhance the capture of carriers in the quantum wells. As a result, the recombination rate of electron and hole in the QWs is enhanced, the light output power and the IQE are improved, and the efficiency droop effect is alleviated. Highlights: Quaternary AlInGaN streamlined quantum barriers are used on AlGaN-based deep ultraviolet light-emitting diodes. The light output power is 4.35 times higher than that of conventional structure. The efficiency droop has been reduced to 0.54%, which is 88 times lower than that of conventional structure. The polarization charge density between quantum wells and quantum barriers decreases significantly. The bending of energy band is obviously alleviated andAbstract: The characteristics of AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs) with quaternary AlInGaN streamlined quantum barriers (QBs) are investigated in this paper. The simulated results show that the light output power and the internal quantum efficiency (IQE) of deep UV LEDs with AlInGaN streamlined QBs have been improved obviously, and the efficiency droop effect has been significantly alleviated. After in-depth study, it is shown that quaternary AlInGaN streamlined QBs is designed to reduce the polarization charge density between quantum wells (QWs) and QBs, and relieve band bending. In addition, the streamline barrier can reduce the kinetic energy of injected carriers, and improve the probability of the carriers being bounced back to the quantum wells, so as to enhance the capture of carriers in the quantum wells. As a result, the recombination rate of electron and hole in the QWs is enhanced, the light output power and the IQE are improved, and the efficiency droop effect is alleviated. Highlights: Quaternary AlInGaN streamlined quantum barriers are used on AlGaN-based deep ultraviolet light-emitting diodes. The light output power is 4.35 times higher than that of conventional structure. The efficiency droop has been reduced to 0.54%, which is 88 times lower than that of conventional structure. The polarization charge density between quantum wells and quantum barriers decreases significantly. The bending of energy band is obviously alleviated and the radiation recombination efficiency is obviously enhanced. … (more)
- Is Part Of:
- Superlattices and microstructures. Volume 145(2020)
- Journal:
- Superlattices and microstructures
- Issue:
- Volume 145(2020)
- Issue Display:
- Volume 145, Issue 2020 (2020)
- Year:
- 2020
- Volume:
- 145
- Issue:
- 2020
- Issue Sort Value:
- 2020-0145-2020-0000
- Page Start:
- Page End:
- Publication Date:
- 2020-09
- Subjects:
- Deep ultraviolet light-emitting diode -- Quaternary AlInGaN -- Streamlined quantum barriers -- Polarization -- Efficiency droop -- Radiation recombination
Superlattices as materials -- Periodicals
Microstructure -- Periodicals
Semiconductors -- Periodicals
Superréseaux -- Périodiques
Microstructure (Physique) -- Périodiques
Semiconducteurs -- Périodiques
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/07496036 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.spmi.2020.106601 ↗
- Languages:
- English
- ISSNs:
- 0749-6036
- Deposit Type:
- Legaldeposit
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- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8547.076700
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