11. High Performance Three-Dimensional Double-Stacked Multiple-Nanochannel and Quadruple-Nanogate ZnO-Based Fin Metal-Oxide-Semiconductor Field-Effect Transistors. (1st January 2017) Authors: Lee, Hsin-Ying; Jian, Li-Yi; Huang, Hung-Lin; Lee, Ching-Ting Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 12(2017) Page Start: Q157 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. High Performance Three-Dimensional Double-Stacked Multiple-Nanochannel and Quadruple-Nanogate ZnO-Based Fin Metal-Oxide-Semiconductor Field-Effect Transistors. (9th December 2017) Authors: Lee, Hsin-Ying; Jian, Li-Yi; Huang, Hung-Lin; Lee, Ching-Ting Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 12(2017) Page Start: Q157 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication. (14th October 2017) Authors: Wang, Huan-Chung; Su, Huan-Fu; Luc, Quang-Ho; Lee, Ching-Ting; Hsu, Heng-Tung; Chang, Edward Yi Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 11(2017) Page Start: S3106 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication. (1st January 2017) Authors: Wang, Huan-Chung; Su, Huan-Fu; Luc, Quang-Ho; Lee, Ching-Ting; Hsu, Heng-Tung; Chang, Edward Yi Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 11(2017) Page Start: S3106 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator. (20th February 2023) Authors: Trung Hieu, Le; Hsu, Heng-Tung; Panda, Debashis; Lee, Ching-Ting; Lin, Chun-Hsiung; Chang, Edward Yi Journal: ECS journal of solid state science and technology Issue: Volume 12:Number 2(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate. (1st July 2022) Authors: Hieu, Le Trung; Chiang, Chung-Han; Anandan, Deepak; Dee, Chang-Fu; Hamzah, Azrul Azlan; Lee, Ching-Ting; Lin, Chung-Hsiung; Chang, Edward Yi Journal: Semiconductor science and technology Issue: Volume 37:Number 7(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. Integrated Monolithic Inverter Using Gate-Recessed GaN-Based Enhancement-Mode and Depletion-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors. (1st January 2017) Authors: Lee, Ching-Ting; Lee, Hsin-Ying; Chang, Jhe-Hao Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 10(2017) Page Start: Q123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. Integrated Monolithic Inverter Using Gate-Recessed GaN-Based Enhancement-Mode and Depletion-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors. (4th October 2017) Authors: Lee, Ching-Ting; Lee, Hsin-Ying; Chang, Jhe-Hao Journal: ECS journal of solid state science and technology Issue: Volume 6:Number 10(2017) Page Start: Q123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
19. Investigated performance improvement of the micro-pressure sandblast-treated multi-crystalline Si wafer sliced using diamond wire sawing. (February 2018) Authors: Wang, Ting-Chun; Lee, Hsin-Ying; Lee, Ching-Ting; Cheng, Yu-Chin; Chen, Hung-Wei Journal: Solar energy Issue: Volume 161(2018) Page Start: 220 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
20. Investigation of Multiple-Mesa-Nanochannel Array GaN-Based MOSHEMTs with Al2O3 Gate Dielectric Layer. (28th May 2021) Authors: Jian, Jhang-Jie; Lee, Hsin-Ying; Chang, Edward Yi; Rorsman, Niklas; Lee, Ching-Ting Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 5(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗