Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator. (20th February 2023)

• Record Type: Journal Article
• Authors: Trung Hieu, Le; Hsu, Heng-Tung; Panda, Debashis; Lee, Ching-Ting; Lin, Chun-Hsiung; Chang, Edward Yi
• Is Part Of: ECS journal of solid state science and technology. Volume 12:Number 2(2023)
• Publication Date: 2023-02-20
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/acbb27
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : An improvement in off-state leakage current and cutoff frequency for AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Raman spectroscopy confirms the low stress of GaN heterostructure grown on a silicon-on-insulator (SOI) substrate. The HEMT devices on SOI substrate show lower knee voltage (Vknee ) and on-resistance (RON ) compared to those on the high-resistive silicon (HR-Si) substrates by 20.8% and 30.4%, respectively. Off-state leakage current is reduced to 10 −7 A mm −1, and the cutoff frequency ( f t ) is increased by 19.2% as compared to HR-Si substrate. Thus, the GaN/SOI technology is proven to be a potential technology for high-frequency communication applications.