Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate. (1st July 2022)

• Record Type: Journal Article
• Authors: Hieu, Le Trung; Chiang, Chung-Han; Anandan, Deepak; Dee, Chang-Fu; Hamzah, Azrul Azlan; Lee, Ching-Ting; Lin, Chung-Hsiung; Chang, Edward Yi
• Is Part Of: Semiconductor science and technology. Volume 37:Number 7(2022)
• Publication Date: 2022-07-01
• Subjects: AlGaN/GaN HEMTs -- MOCVD -- silicon-on-insulator -- thermal characteristics -- dynamic on-resistance; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/ac71c0
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: AlGaN/GaN high electron mobility transistors (HEMTs) heterostructures are grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate and high-resistivity silicon (HR-Si) simultaneously to investigate the influence of substrate types on electrical and thermal characteristics. The AlGaN/GaN HEMT epitaxial structure grown on SOI achieved high electron mobility (1900 ± 19 cm 2 (V s) −1 ) and high two-dimensional electron gas carrier concentration (9.1 ± 0.1 × 10 12 cm −2 ). The GaN HEMT metal–insulator–semiconductor gate device fabricated on the structure grown on the SOI substrate exhibits higher saturation current and improved buffer breakdown voltage compared with devices fabricated on HR-Si substrate. In particular, SOI substrate helps to improve the thermal-sensitive strain of the GaN-based heterostructure and reduced defect density in the epitaxy, thereby improve the temperature-dependent on-resistance ( R ON ) and the dynamic R ON of the device.