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3. Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides. (April 2021)

5. High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9–2.0 μm. (October 2021)

7. High-power pulsed hybrid semiconductor lasers emitting in the wavelength range 900–920 nm. (October 2021)

8. Improvement of the current–voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940–980 nm). (February 2022)

9. InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900–920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics. (October 2021)