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Author/Creator Lacam, C.

1. Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Issue 9 (August 2015)

Authors:
Bisi, D.; Stocco, A.; Rossetto, I.; Meneghini, M.; Rampazzo, F.; Chini, A.; Soci, F.; Pantellini, A.; Lanzieri, C.; Gamarra, P.; Lacam, C.; Tordjman, M.; di Forte-Poisson, M.-A.; De Salvador, D.; Bazzan, M.; Meneghesso, G.; Zanoni, E.
Journal:
Microelectronics and reliability
Issue:
Volume 55:Issue 9/10(2015)
Page Start:
1662
Record Type:
Journal Article
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3. Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress. (November 2021)

Authors:
Gao, Zhan; Rampazzo, Fabiana; Meneghini, Matteo; Modolo, Nicola; De Santi, Carlo; Blanck, Hervé; Stieglauer, Hermann; Sommer, Daniel; Grünenpütt, Jan; Kordina, Olof; Chen, Jr-Tai; Jacquet, J-C; Lacam, C.; Piotrowicz, S.; Meneghesso, Gaudenzio; Zanoni, Enrico
Journal:
Microelectronics and reliability
Issue:
Volume 126(2021)
Page Start:
Record Type:
Journal Article
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4. Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. (September 2018)

Authors:
Oualli, M.; Dua, C.; Patard, O.; Altuntas, P.; Piotrowicz, S.; Gamarra, P.; Lacam, C.; Jacquet, J.-C.; Teisseire, L.; Lancereau, D.; Chartier, E.; Potier, C.; Delage, S.L.
Journal:
Microelectronics and reliability
Issue:
Volume 88/90(2018)
Page Start:
418
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗