Author/Creator: Kurashima, Keisuke - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Kurashima, Keisuke

1. High-Temperature Reactor Cleaning Using Chlorine Trifluoride Gas for Silicon Carbide Chemical Vapor Deposition. (17th July 2019)

Authors:: Kurashima, Keisuke; Hayashi, Masaya; Habuka, Hitoshi; Ito, Hideki; Mitani, Sin-ichi; Mizushima, Ichiro; Takahashi, Yoshinao
Journal:: ECS journal of solid state science and technology
Issue:: Volume 8:Number 8(2019)
Page Start:: P400
Record Type:: Journal Article
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2. High-Temperature Reactor Cleaning Using Chlorine Trifluoride Gas for Silicon Carbide Chemical Vapor Deposition. (1st January 2019)

Authors:: Kurashima, Keisuke; Hayashi, Masaya; Habuka, Hitoshi; Ito, Hideki; Mitani, Sin-ichi; Mizushima, Ichiro; Takahashi, Yoshinao
Journal:: ECS journal of solid state science and technology
Issue:: Volume 8:Number 8(2019)
Page Start:: P400
Record Type:: Journal Article
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3. Influence of residual dopants to net doping concentration in N-type 4H-SiC films grown using high-speed wafer rotation vertical CVD method. (1st May 2022)

Authors:: Daigo, Yoshiaki; Takada, Yuya; Kurashima, Keisuke; Watanabe, Toru; Ishiguro, Akio; Ishii, Shigeaki; Moriyama, Yoshikazu; Mizushima, Ichiro
Journal:: Japanese journal of applied physics
Issue:: Volume 61:Number SC(2022)
Page Start:
Record Type:: Journal Article
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4. Mirror Etching of Single Crystalline C-Face 4H-Silicon Carbide Wafer by Chlorine Trifluoride Gas. (1st January 2017)

Authors:: Okuyama, Shogo; Kurashima, Keisuke; Habuka, Hitoshi; Takahashi, Yoshinao; Kato, Tomohisa
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 9(2017)
Page Start:: P582
Record Type:: Journal Article
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5. Mirror Etching of Single Crystalline C-Face 4H-Silicon Carbide Wafer by Chlorine Trifluoride Gas. (8th August 2017)

Authors:: Okuyama, Shogo; Kurashima, Keisuke; Habuka, Hitoshi; Takahashi, Yoshinao; Kato, Tomohisa
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 9(2017)
Page Start:: P582
Record Type:: Journal Article
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6. Quick Cleaning Process for Silicon Carbide Chemical Vapor Deposition Reactor. (1st January 2017)

Authors:: Shioda, Kohei; Kurashima, Keisuke; Habuka, Hitoshi; Ito, Hideki; Mitani, Shin-ichi; Takahashi, Yoshinao
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 8(2017)
Page Start:: P526
Record Type:: Journal Article
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7. Quick Cleaning Process for Silicon Carbide Chemical Vapor Deposition Reactor. (7th July 2017)

Authors:: Shioda, Kohei; Kurashima, Keisuke; Habuka, Hitoshi; Ito, Hideki; Mitani, Shin-ichi; Takahashi, Yoshinao
Journal:: ECS journal of solid state science and technology
Issue:: Volume 6:Number 8(2017)
Page Start:: P526
Record Type:: Journal Article
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8. Yttrium oxide film for protecting quartz glass surface from etching by long-term exposure to chlorine trifluoride gas at room temperature. (15th August 2018)

Authors:: Kawasaki, Ryohei; Umetsu, Yasuhiro; Kurashima, Keisuke; Shioda, Kohei; Hirooka, Asumi; Habuka, Hitoshi
Journal:: Materials science in semiconductor processing
Issue:: Volume 83(2018)
Page Start:: 211
Record Type:: Journal Article
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