Influence of residual dopants to net doping concentration in N-type 4H-SiC films grown using high-speed wafer rotation vertical CVD method. (1st May 2022)

• Record Type: Journal Article
• Authors: Daigo, Yoshiaki; Takada, Yuya; Kurashima, Keisuke; Watanabe, Toru; Ishiguro, Akio; Ishii, Shigeaki; Moriyama, Yoshikazu; Mizushima, Ichiro
• Is Part Of: Japanese journal of applied physics. Volume 61:Number SC(2022)
• Publication Date: 2022-05-01
• Subjects: epitaxial growth -- CVD -- doping concentration -- residual dopants; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac4c08
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this study, the influence of residual dopants on the net doping concentration in n-type 4H-SiC epitaxial films grown at different N2 flow rates and C/Si ratios were investigated. By reducing the N2 flow rate, the influence of the residual donors on the net doping concentration was observed to become dominant for the films grown at low C/Si ratios and that of the residual acceptors on the net doping concentration becomes dominant for the films grown at high C/Si ratios. For the films grown at the middle C/Si ratio, an apparent proportional relation due to the compensation balance between the residual and intentional donors and the residual acceptors was observed in the N2 flow rate dependence of the net doping concentration. Furthermore, the decay curve of the net doping concentration observed in the C/Si ratio dependence is affected by the compensation balance between the intentional dopant concentration and the residual dopant concentration.