Quick Cleaning Process for Silicon Carbide Chemical Vapor Deposition Reactor. (1st January 2017)

• Record Type: Journal Article
• Authors: Shioda, Kohei; Kurashima, Keisuke; Habuka, Hitoshi; Ito, Hideki; Mitani, Shin-ichi; Takahashi, Yoshinao
• Is Part Of: ECS journal of solid state science and technology. Volume 6:Number 8(2017)
• Page Start: P526
• Page End: P530
• Publication Date: 2017-01-01
• Subjects: chemical vapor deposition -- chlorine trifluoride -- reactor cleaning -- Silicon carbide; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2.0161708jss
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : A quick cleaning process was developed for a silicon carbide chemical vapor deposition reactor. For this purpose, the stability of the susceptor coating film made of pyrolytic carbon was evaluated by means of exposing it to 100% chlorine trifluoride gas for 10 min at various temperatures. The original surface morphology of the pyrolytic carbon film was maintained under 480°C. The fluorine atoms incorporated into the pyrolytic carbon film were removed by annealing at 900°C either in ambient hydrogen or in ambient nitrogen. Finally, the 30-μm thick silicon carbide film formed on the pyrolytic carbon was successfully cleaned by the chlorine trifluoride gas either at 400°C for 30 min or at 460°C for 15 min and by additional annealing in ambient nitrogen at 900°C.