1. (Invited) Comparison of High Voltage, Vertical Geometry Ga2O3 Rectifiers with GaN and SiC. (3rd July 2019) Authors: Yang, Jiancheng; Fares, Chaker; Carey, Patrick H; Xian, Minghan; Ren, Fan; Tadjer, Marko J.; Chen, Yen-Ting; Liao, Yu-Te; Chang, Chin-Wei; Lin, Jenshan; Sharma, Ribhu; Law, Mark E; Raad, Peter E.; Komarov, Pavel L.; Smith, David J; Kuramata, Akito; Pearton, Stephen J. Journal: ECS transactions Issue: Volume 92:Number 7(2019) Page Start: 15 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Keynote) Advances in Ga2O3 Processing and Devices. (25th October 2017) Authors: Yang, Jiancheng; Carey, Patrick; Ahn, Shihyun; Ren, Fan; Jang, Soohwan; Kim, Jihyun; Hays, David; Pearton, Stephen J.; Kuramata, Akito Journal: ECS transactions Issue: Volume 80:Number 10(2017) Page Start: 959 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Anisotropic radius of curvature of crystal planes in wide-bandgap semiconductor wafers measured by X-ray diffraction. (2nd December 2021) Authors: Yao, Yongzhao; Sugawara, Yoshihiro; Yokoe, Daisaku; Hirano, Keiichi; Okada, Narihito; Tadatomo, Kazuyuki; Sasaki, Kohei; Kuramata, Akito; Ishikawa, Yukari Journal: Japanese journal of applied physics Issue: Volume 60:Number 12(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Band alignment of Al2O3 with (−201) β-Ga2O3. (August 2017) Authors: Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B.P.; Pearton, S.J.; Jang, Soohwan; Kuramata, Akito Journal: Vacuum Issue: Volume 142(2017) Page Start: 52 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Band alignment of atomic layer deposited SiO2 and HfSiO4 with β-Ga2O3. (14th June 2017) Authors: Carey, Patrick H.; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito Journal: Japanese journal of applied physics Issue: Volume 56:Number 7(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Carrier confinement observed at modulation-doped β-(AlxGa1−x)2O3/Ga2O3 heterojunction interface. (24th February 2017) Authors: Oshima, Takayoshi; Kato, Yuji; Kawano, Naoto; Kuramata, Akito; Yamakoshi, Shigenobu; Fujita, Shizuo; Oishi, Toshiyuki; Kasu, Makoto Journal: Applied physics express Issue: Volume 10:Number 3(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Characterization of crystalline defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth and halide vapor-phase epitaxy using synchrotron X-ray topography. (12th April 2019) Authors: Masuya, Satoshi; Sasaki, Kohei; Kuramata, Akito; Yamakoshi, Shigenobu; Ueda, Osamu; Kasu, Makoto Journal: Japanese journal of applied physics Issue: Volume 58:Number 5(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on Schottky barrier diodes. (1st June 2023) Authors: Sdoeung, Sayleap; Sasaki, Kohei; Kawasaki, Katsumi; Hirabayashi, Jun; Kuramata, Akito; Kasu, Makoto Journal: Japanese journal of applied physics Issue: Volume 62:Number SF(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Corrigendum to "Slip system analysis and X-ray topographic study on β-Ga2O3" [Superlattice. Microst. 99 (2016) 99–103]. (June 2019) Authors: Yamaguchi, Hirotaka; Kuramata, Akito; Masui, Tekekazu Journal: Superlattices and microstructures Issue: Volume 130(2019) Page Start: 232 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on β-Ga2O3. (28th July 2017) Authors: Kasu, Makoto; Oshima, Takayoshi; Hanada, Kenji; Moribayashi, Tomoya; Hashiguchi, Akihiro; Oishi, Toshiyuki; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu Journal: Japanese journal of applied physics Issue: Volume 56:Number 9(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗