Carrier confinement observed at modulation-doped β-(AlxGa1−x)2O3/Ga2O3 heterojunction interface. (24th February 2017)

• Record Type: Journal Article
• Authors: Oshima, Takayoshi; Kato, Yuji; Kawano, Naoto; Kuramata, Akito; Yamakoshi, Shigenobu; Fujita, Shizuo; Oishi, Toshiyuki; Kasu, Makoto
• Is Part Of: Applied physics express. Volume 10:Number 3(2017)
• Publication Date: 2017-02-24
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.10.035701
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: A β-(Al x Ga1− x )2 O3 :Si/Ga2 O3 modulation-doped structure was fabricated by direct β-(Al x Ga1− x )2 O3 epitaxial growth on a (010) β-Ga2 O3 substrate. Si on the order of 10 18 cm −3 from adsorbed contaminants on the substrate surface was doped into the β-(Al x Ga1− x )2 O3 layer. The heterojunction interface exhibited a confined sheet carrier density of ∼3 × 10 12 cm −2, which is on the same order as that of AlGaAs/GaAs. The successful modulation doping for the β-(Al x Ga1− x )2 O3 /Ga2 O3 heterostructure encourages the development of β-Ga2 O3 -based heterojunction field-effect transistors.