Author/Creator: Kub, Francis J - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Kub, Francis J

1. (Invited) Developing Periodically Oriented Gallium Nitride for Frequency Conversion. (13th April 2015)

Authors:: Hite, Jennifer K; Freitas, Jaime A.; Mastro, Michael A; Vurgaftman, Igor; Meyer, Jerry R.; Brown, Christopher G.; Kub, Francis J; Bowman, Steven R.; Eddy, Charles R.
Journal:: ECS transactions
Issue:: Volume 66:Number 1(2015)
Page Start:: 107
Record Type:: Journal Article
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2. (Invited) Displacement Damage and Single Event Effects in AlGaN/GaN HEMTs. (5th January 2017)

Authors:: Koehler, Andrew D.; Anderson, Travis J; Khachatrian, Ani; Roche, Nicolas J.-H.; Buchner, Stephen; Weaver, Brad D; Hobart, Karl D; Kub, Francis J
Journal:: ECS transactions
Issue:: Volume 75:Number 40(2016)
Page Start:: 13
Record Type:: Journal Article
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3. (Invited) Electrothermal Performance Optimization of III-Nitride HEMTs Capped with Nanocrystalline Diamond. (25th April 2016)

Authors:: Tadjer, Marko J.; Anderson, Travis J; Feygelson, Tatyana I; Hobart, Karl D; Ancona, Mario G.; Koehler, Andrew D.; Hite, Jennifer K; Wheeler, Virginia D.; Pate, Bradford B; Kub, Francis J; Eddy, Charles R.
Journal:: ECS transactions
Issue:: Volume 72:Number 5(2016)
Page Start:: 3
Record Type:: Journal Article
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4. (Invited) From MRTA to SMRTA: Improvements in Activating Implanted Dopants in GaN. (16th September 2015)

Authors:: Greenlee, Jordan D; Feigelson, Boris; Anderson, Travis J; Hite, Jennifer K; Hobart, Karl D; Kub, Francis J
Journal:: ECS transactions
Issue:: Volume 69:Number 14(2015)
Page Start:: 97
Record Type:: Journal Article
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5. (Invited) Improved Vertical GaN Diodes with Mg Ion Implanted Junction Termination Extension. (23rd August 2016)

Authors:: Anderson, Travis J; Koehler, Andrew D.; Feigelson, Boris; Hobart, Karl D; Kub, Francis J
Journal:: ECS transactions
Issue:: Volume 75:Number 12(2016)
Page Start:: 93
Record Type:: Journal Article
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6. (Invited) Radiation-Induced Defect Mechanisms in GaN HEMTs. (21st September 2015)

Authors:: Koehler, Andrew D.; Anderson, Travis J; Specht, Petra; Weaver, Brad D; Greenlee, Jordan D; Tadjer, Marko J; Shahin, David I; Hobart, Karl D; Kub, Francis J
Journal:: ECS transactions
Issue:: Volume 69:Number 11(2015)
Page Start:: 57
Record Type:: Journal Article
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7. (Invited) Temporary Bonding with Polydimethylglutarimide for Residue-Free Layer Transfer and 3-D Integration. (14th September 2015)

Authors:: Matsumae, Takashi; Koehler, Andrew D.; Greenlee, Jordan D; Anderson, Travis J; Baumgart, Helmut; Jernigan, Glenn G; Hobart, Karl D; Kub, Francis J
Journal:: ECS transactions
Issue:: Volume 69:Number 10(2015)
Page Start:: 29
Record Type:: Journal Article
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8. (Invited) Vertical GaN p-i-n Diodes Formed by Mg Ion Implantation. (21st September 2015)

Authors:: Anderson, Travis J; Greenlee, Jordan D; Feigelson, Boris; Hite, Jennifer K; Hobart, Karl D; Kub, Francis J
Journal:: ECS transactions
Issue:: Volume 69:Number 11(2015)
Page Start:: 99
Record Type:: Journal Article
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9. Advances in AlGaN/GaN HEMT Surface Passivation. (23rd August 2016)

Authors:: Koehler, Andrew D.; Tadjer, Marko J.; Anderson, Travis J; Chojecki, P.; Hobart, Karl D; Kub, Francis J
Journal:: ECS transactions
Issue:: Volume 75:Number 12(2016)
Page Start:: 99
Record Type:: Journal Article
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10. ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices. (14th August 2017)

Authors:: Wheeler, Virginia D.; Anderson, Travis J; Ahn, Shihyun; Shahin, David I; Tadjer, Marko J; Koehler, Andrew D.; Hobart, Karl D; Ren, Fan; Kub, Francis J; Christou, Aris; Eddy, Charles R.
Journal:: ECS transactions
Issue:: Volume 80:Number 3(2017)
Page Start:: 17
Record Type:: Journal Article
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