(Invited) Radiation-Induced Defect Mechanisms in GaN HEMTs. (21st September 2015)

• Record Type: Journal Article
• Authors: Koehler, Andrew D.; Anderson, Travis J; Specht, Petra; Weaver, Brad D; Greenlee, Jordan D; Tadjer, Marko J; Shahin, David I; Hobart, Karl D; Kub, Francis J
• Is Part Of: ECS transactions. Volume 69:Number 11(2015)
• Page Start: 57
• Page End: 63
• Publication Date: 2015-09-21
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/06911.0057ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : GaN high electron mobility transistors (HEMTs) have the potential to be extremely tolerant of space and weapons of mass destruction radiation found in space and resulting from weapons of mass destruction. AlGaN/GaN HEMTs were fabricated on Si substrates and passivated with plasma enhanced chemical vapor deposition (PECVD) SiN, also HEMTs with in situ SiN and additional PECVD SiN were compared. These samples were exposed to 2 MeV protons, up to 6x10 14 cm -2, which resulted in decreased mobility, decreased sheet carrier density, and an increase in dynamic ON-resistance. High resolution scanning transmission electron microscopy revealed roughening of the AlGaN/GaN interface. Off-state pulsed quiescent voltage stress was used to investigate the dynamic ON-resistance of GaN HEMTs before and after radiation. HEMTs with in situ SiN plus PECVD SiN shows improved radiation hardness for dynamic ON-resistance.