1. (Invited) Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor. (21st September 2015) Authors: Papasouliotis, George D; Su, Jie; Krishnan, Balakrishnan; Arif, Ronald Journal: ECS transactions Issue: Volume 69:Number 11(2015) Page Start: 73 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs. (1st January 2019) Authors: Binder, Andrew; Khan, Sakeenah; Yang, Wen; Yuan, Jiann-Shiun; Krishnan, Balakrishnan; Shea, Patrick M. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 2(2019) Page Start: Q15 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs. (21st February 2019) Authors: Binder, Andrew; Khan, Sakeenah; Yang, Wen; Yuan, Jiann-Shiun; Krishnan, Balakrishnan; Shea, Patrick M. Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 2(2019) Page Start: Q15 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Fabless design approach for lateral optimization of low voltage GaN power HEMTs. (September 2018) Authors: Binder, Andrew; Yuan, Jiann-Shiun; Krishnan, Balakrishnan; Shea, Patrick M. Journal: Superlattices and microstructures Issue: Volume 121(2018) Page Start: 92 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers. Issue 1736 (18th December 2014) Authors: Su, Jie; Armour, Eric A.; Krishnan, Balakrishnan; Lee, Soo Min; Papasouliotis, George D. Editors: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T. Journal: MRS proceedings Issue: Issue 1736:(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers. Issue 1736 (18th December 2014) Authors: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T.; Su, Jie; Armour, Eric A.; Krishnan, Balakrishnan; Lee, Soo Min; Papasouliotis, George D. Journal: MRS proceedings Issue: Issue 1736:(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor. Issue 19 (7th August 2015) Authors: Su, Jie; Armour, Eric A.; Krishnan, Balakrishnan; Lee, Soo Min; Papasouliotis, George D. Journal: Journal of materials research Issue: Volume 30:Issue 19(2015) Page Start: 2846 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Trap induced negative differential conductance and back-gated charge redistribution in AlGaN/GaN power devices. (November 2019) Authors: Binder, Andrew T.; Yuan, Jiann-Shiun; Krishnan, Balakrishnan; Shea, Patrick M.; Yeh, Wen-Kuan Journal: Microelectronics and reliability Issue: Volume 102(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗