Author/Creator: Krishnan, Balakrishnan - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Krishnan, Balakrishnan

1. (Invited) Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor. (21st September 2015)

Authors:: Papasouliotis, George D; Su, Jie; Krishnan, Balakrishnan; Arif, Ronald
Journal:: ECS transactions
Issue:: Volume 69:Number 11(2015)
Page Start:: 73
Record Type:: Journal Article
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2. Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs. (1st January 2019)

Authors:: Binder, Andrew; Khan, Sakeenah; Yang, Wen; Yuan, Jiann-Shiun; Krishnan, Balakrishnan; Shea, Patrick M.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 8:Number 2(2019)
Page Start:: Q15
Record Type:: Journal Article
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3. Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs. (21st February 2019)

Authors:: Binder, Andrew; Khan, Sakeenah; Yang, Wen; Yuan, Jiann-Shiun; Krishnan, Balakrishnan; Shea, Patrick M.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 8:Number 2(2019)
Page Start:: Q15
Record Type:: Journal Article
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4. Fabless design approach for lateral optimization of low voltage GaN power HEMTs. (September 2018)

Authors:: Binder, Andrew; Yuan, Jiann-Shiun; Krishnan, Balakrishnan; Shea, Patrick M.
Journal:: Superlattices and microstructures
Issue:: Volume 121(2018)
Page Start:: 92
Record Type:: Journal Article
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5. Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers. Issue 1736 (18th December 2014)

Authors:: Su, Jie; Armour, Eric A.; Krishnan, Balakrishnan; Lee, Soo Min; Papasouliotis, George D.
Editors:: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T.
Journal:: MRS proceedings
Issue:: Issue 1736:(2015)
Page Start:
Record Type:: Journal Article
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6. Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers. Issue 1736 (18th December 2014)

Authors:: Kaplar, R.; Meneghesso, G.; Ozpineci, B.; Takeuchi, T.; Su, Jie; Armour, Eric A.; Krishnan, Balakrishnan; Lee, Soo Min; Papasouliotis, George D.
Journal:: MRS proceedings
Issue:: Issue 1736:(2015)
Page Start:
Record Type:: Journal Article
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7. Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor. Issue 19 (7th August 2015)

Authors:: Su, Jie; Armour, Eric A.; Krishnan, Balakrishnan; Lee, Soo Min; Papasouliotis, George D.
Journal:: Journal of materials research
Issue:: Volume 30:Issue 19(2015)
Page Start:: 2846
Record Type:: Journal Article
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8. Trap induced negative differential conductance and back-gated charge redistribution in AlGaN/GaN power devices. (November 2019)

Authors:: Binder, Andrew T.; Yuan, Jiann-Shiun; Krishnan, Balakrishnan; Shea, Patrick M.; Yeh, Wen-Kuan
Journal:: Microelectronics and reliability
Issue:: Volume 102(2019)
Page Start:
Record Type:: Journal Article
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