1. (Invited) Proximity Gettering Design of Hydrocarbon Molecular Ion Implanted Silicon Wafers Using Direct Bonding Technique for Advanced CMOS Image Sensors: A Review. (20th July 2018) Authors: Kurita, Kazunari; Koga, Yoshihiro; Okuyama, Ryousuke; Kadono, Takeshi; Shigematsu, Satoshi; Masada, Ayumi Onaka; Hirose, Ryo; Okuda, Hidehiko Journal: ECS transactions Issue: Volume 86:Number 5(2018) Page Start: 77 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Corrigendum: "Proximity gettering technique using CH3O multielement molecular ion implantation for white spot defect density reduction in CMOS image sensor" [Jpn. J. Appl. Phys. 58, 091002 (2019)]. (30th September 2019) Authors: Hirose, Ryo; Kadono, Takeshi; Okuyama, Ryosuke; Onaka-Masada, Ayumi; Shigematsu, Satoshi; Kobayashi, Koji; Koga, Yoshihiro; Kurita, Kazunari Journal: Japanese journal of applied physics Issue: Volume 58:Number 10(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers. (6th December 2017) Authors: Okuyama, Ryosuke; Masada, Ayumi; Shigematsu, Satoshi; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Okuda, Hidehiko; Kurita, Kazunari Journal: Japanese journal of applied physics Issue: Volume 57:Number 1(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors. (15th January 2018) Authors: Onaka-Masada, Ayumi; Nakai, Toshiro; Okuyama, Ryosuke; Okuda, Hidehiko; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Kurita, Kazunari; Sueoka, Koji Journal: Japanese journal of applied physics Issue: Volume 57:Number 2(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effect of ramping up rate on end of range defect in multielement molecular-ion (CH3O)-implanted silicon wafers. (6th November 2019) Authors: Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryosuke; Kadono, Takeshi; Shigematsu, Satoshi; Kobayashi, Kouji; Suzuki, Akihiro; Koga, Yoshihiro; Matsuo, Jiro; Kurita, Kazunari Journal: Japanese journal of applied physics Issue: Volume 58:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Floating zone silicon wafer bonded to Czochralski silicon substrate by surface-activated bonding at room temperature for infrared complementary metal-oxide-semiconductor image sensors. (15th December 2020) Authors: Koga, Yoshihiro; Kurita, Kazunari Journal: Japanese journal of applied physics Issue: Volume 60:Number 1(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Fundamental Characteristics of Cyanide‐Related Multielement Molecular Ion‐Implanted Epitaxial Si Wafers for High‐Performance CMOS Image Sensors. Issue 17 (11th September 2019) Authors: Suzuki, Akihiro; Kadono, Takeshi; Hirose, Ryo; Okuyama, Ryosuke; Masada, Ayumi; Shigematsu, Satoshi; Kobayashi, Koji; Koga, Yoshihiro; Kurita, Kazunari Other Names: Kissinger Gudrun guestEditor.; Kot Dawid guestEditor.; Richter Hans guestEditor.; Zöllner Marvin guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 17(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Fundamental Characteristics of Cyanide‐Related Multielement Molecular Ion‐Implanted Epitaxial Si Wafers for High‐Performance CMOS Image Sensors. Issue 17 (29th May 2019) Authors: Suzuki, Akihiro; Kadono, Takeshi; Hirose, Ryo; Okuyama, Ryosuke; Masada, Ayumi; Shigematsu, Satoshi; Kobayashi, Koji; Koga, Yoshihiro; Kurita, Kazunari Other Names: Kissinger Gudrun guestEditor.; Kot Dawid guestEditor.; Richter Hans guestEditor.; Zöllner Marvin guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 17(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Hydrogen diffusion behavior in CH2P-molecular-ion-implanted silicon wafers for CMOS image sensors. (January 2022) Authors: Okuyama, Ryosuke; Kadono, Takeshi; Onaka-Masada, Ayumi; Suzuki, Akihiro; Kobayashi, Koji; Shigematsu, Satoshi; Hirose, Ryo; Koga, Yoshihiro; Kurita, Kazunari Journal: Materials science in semiconductor processing Issue: Volume 137(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Hydrogen passivation for reduction of SiO2/Si interface state density using hydrocarbon-molecular-ion-implanted silicon wafers. (9th November 2020) Authors: Okuyama, Ryosuke; Kadono, Takeshi; Onaka-Masada, Ayumi; Suzuki, Akihiro; Kobayashi, Koji; Shigematsu, Satoshi; Hirose, Ryo; Koga, Yoshihiro; Kurita, Kazunari Journal: Japanese journal of applied physics Issue: Volume 59:Number 12(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗