Effect of ramping up rate on end of range defect in multielement molecular-ion (CH3O)-implanted silicon wafers. (6th November 2019)

• Record Type: Journal Article
• Authors: Hirose, Ryo; Onaka-Masada, Ayumi; Okuyama, Ryosuke; Kadono, Takeshi; Shigematsu, Satoshi; Kobayashi, Kouji; Suzuki, Akihiro; Koga, Yoshihiro; Matsuo, Jiro; Kurita, Kazunari
• Is Part Of: Japanese journal of applied physics. Volume 58:Number 12(2019)
• Publication Date: 2019-11-06
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/1347-4065/ab4fc9
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The dependence of the density of CH3 O ion-implantation defects on ramping up rate after annealing at 1100 °C for 300 s have been investigated using rapid thermal annealing. We found that the density of defects after annealing was highest at a ramping up rate of 15 °C s −1 . Furthermore, we also found that the diffusion behavior of implanted carbon and oxygen which were gettered by the CH3 O ion-implantation defects, was dependent on the annealing temperature. Therefore, the ramping up rate dependence of the density of CH3 O ion-implantation defects was considered to be caused by the difference between the formation behavior of CH3 O ion-implantation defects and the dissociative adsorption behavior of carbon and oxygen. An increase in the defect density led to an increase in the density of gettering sinks. The gettering capability of the CH3 O ion-implantation region is expected to be improved by optimizing the ramping up rate.