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Author/Creator Koblmüller, Gregor

11. Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse‐Reaction Growth. (25th February 2015)

Authors:
Loitsch, Bernhard; Rudolph, Daniel; Morkötter, Stefanie; Döblinger, Markus; Grimaldi, Gianluca; Hanschke, Lukas; Matich, Sonja; Parzinger, Eric; Wurstbauer, Ursula; Abstreiter, Gerhard; Finley, Jonathan J.; Koblmüller, Gregor
Journal:
Advanced materials
Issue:
Volume 27:Number 13(2015)
Page Start:
2195
Record Type:
Journal Article
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12. Ultrafast photocurrents and THz generation in single InAs‐nanowires. Issue 1 (17th December 2012)

Authors:
Erhard, Nadine; Seifert, Paul; Prechtel, Leonhard; Hertenberger, Simon; Karl, Helmut; Abstreiter, Gerhard; Koblmüller, Gregor; Holleitner, Alexander W.; Hommelhoff, Peter; Kling, Matthias; Stockman, Mark
Journal:
Annalen der Physik
Issue:
Volume 525:Issue 1/2(2013)
Page Start:
180
Record Type:
Journal Article
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13. Vacancy defect formation in PA‐MBE grown C‐doped InN. Issue 3 (4th March 2014)

Authors:
Prozheeva, Vera; Tuomisto, Filip; Koblmüller, Gregor; Speck, James S.; Knübel, Andreas; Aidam, Rolf
Other Names:
Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
Journal:
Physica status solidi
Issue:
Volume 11:Issue 3/4(2014:Apr.)
Page Start:
530
Record Type:
Journal Article
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