Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse‐Reaction Growth. (25th February 2015)

• Record Type: Journal Article
• Authors: Loitsch, Bernhard; Rudolph, Daniel; Morkötter, Stefanie; Döblinger, Markus; Grimaldi, Gianluca; Hanschke, Lukas; Matich, Sonja; Parzinger, Eric; Wurstbauer, Ursula; Abstreiter, Gerhard; Finley, Jonathan J.; Koblmüller, Gregor
• Is Part Of: Advanced materials. Volume 27:Number 13(2015)
• Page Start: 2195
• Page End: 2202
• Publication Date: 2015-02-25
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201404900
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201404900-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A unique growth scheme</bold> is demonstrated to realize ultrathin GaAs nanowires on Si with sizes down to the sub‐10 nm regime. While this scheme preserves the bulk‐like crystal properties, correlated optical experiments reveal huge blueshifted photo­luminescence (up to ≈100 meV) with decreasing nanowire cross‐section, demonstrating very strong quantum confinement effects. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgjf4gf0pk" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>