1. 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory. (18th October 2012) Authors: Kim, Gun Hwan; Lee, Jong Ho; Ahn, Youngbae; Jeon, Woojin; Song, Seul Ji; Seok, Jun Yeong; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Joo; Hwang, Cheol Seong Journal: Advanced functional materials Issue: Volume 23:Number 11(2013) Page Start: 1440 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View. (3rd July 2014) Authors: Seok, Jun Yeong; Song, Seul Ji; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Hyung; Kwon, Dae Eun; Lim, Hyungkwang; Kim, Gun Hwan; Jeong, Doo Seok; Hwang, Cheol Seong Journal: Advanced functional materials Issue: Volume 24:Number 34(2014) Page Start: 5316 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity. Issue 11 (12th March 2021) Authors: Hwang, Jeong Min; Han, Seung-Min; Yang, Hanuel; Yeo, Seungmin; Lee, Seung-Hun; Park, Chan Woo; Kim, Gun Hwan; Park, Bo Keun; Byun, Younghun; Eom, Taeyong; Chung, Taek-Mo Journal: Journal of materials chemistry Issue: Volume 9:Issue 11(2021) Page Start: 3820 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In, Ga)Se2 solar cell. (15th April 2018) Authors: Agbenyeke, Raphael Edem; Song, Soomin; Park, Bo Keun; Kim, Gun Hwan; Yun, Jae Ho; Chung, Taek‐Mo; Kim, Chang Gyoun; Han, Jeong Hwan Journal: Progress in photovoltaics Issue: Volume 26:Number 9(2018) Page Start: 745 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Corrigendum to 'Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films'[Acta Materialia 222 (2022) 117405]. (1st April 2023) Authors: Lee, Dong Hyun; Yu, Geun Taek; Park, Ju Yong; Kim, Se Hyun; Yang, Kun; Park, Geun Hyeong; Ryu, Jin Ju; Lee, Je In; Kim, Gun Hwan; Park, Min Hyuk Journal: Acta materialia Issue: Volume 247(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Dot‐Product Operation in Crossbar Array Using a Self‐Rectifying Resistive Device. Issue 20 (9th June 2022) Authors: Jeon, Kanghyeok; Ryu, Jin Joo; Jeong, Doo Seok; Kim, Gun Hwan Journal: Advanced materials interfaces Issue: Volume 9:Issue 20(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109. (17th May 2017) Authors: Yoon, Kyung Jean; Kim, Gun Hwan; Yoo, Sijung; Bae, Woorham; Yoon, Jung Ho; Park, Tae Hyung; Kwon, Dae Eun; Kwon, Yeong Jae; Kim, Hae Jin; Kim, Yu Min; Hwang, Cheol Seong Journal: Advanced Electronic Materials Issue: Volume 3:Number 7(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films. (1st January 2022) Authors: Lee, Dong Hyun; Yu, Geun Taek; Park, Ju Yong; Kim, Se Hyun; Yang, Kun; Park, Geun Hyeong; Ryu, Jin Ju; Lee, Je In; Kim, Gun Hwan; Park, Min Hyuk Journal: Acta materialia Issue: Volume 222(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates. (1st May 2022) Authors: Yang, Kun; Lee, Eun Been; Lee, Dong Hyun; Park, Ju Yong; Kim, Se Hyun; Park, Geun Hyeong; Yu, Geun Taek; Lee, Je In; Kim, Gun Hwan; Park, Min Hyuk Journal: Composites Issue: Number 236(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device. Issue 40 (30th August 2017) Authors: Kim, Gun Hwan; Ju, Hyunsu; Yang, Min Kyu; Lee, Dong Kyu; Choi, Ji Woon; Jang, Jae Hyuck; Lee, Sang Gil; Cha, Ik Su; Park, Bo Keun; Han, Jeong Hwan; Chung, Taek‐Mo; Kim, Kyung Min; Hwang, Cheol Seong; Lee, Young Kuk Journal: Small Issue: Volume 13:Issue 40(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗