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2. AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment. Issue 7 (11th December 2019)

4. Characterization of N-polar AlN in GaN/AlN/(Al, Ga)N heterostructures grown by metal-organic chemical vapor deposition. (29th September 2017)

9. Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays. (16th December 2020)