Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films. Issue 1 (26th September 2018)

• Record Type: Journal Article
• Authors: Laurent, Matthew A.; Keller, Stacia; Mishra, Umesh K.
• Other Names: Chowdhury Srabanti guestEditor.; Palacios Tomas guestEditor.; Xing Grace (Huili) guestEditor.
• Is Part Of: Physica status solidi. Volume 216:Issue 1(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-09-26
• Subjects: AlInGaN -- crystal growth -- MOCVD -- morphology -- quaternary; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201800523
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : This study presents a systematic characterization of AlInGaN films grown by metalorganic chemical vapor deposition as a function of thickness, V‐III ratio, temperature, growth rate, and composition. The AlInGaN films grown in this study exhibited features of the spiral growth mode, whose characteristic hillock features may be described by the theory of crystal growth by Burton, Cabrera, and Frank (BCF theory). According to BCF theory, an increase in the driving force for the vapor‐to‐solid phase transition (moving further from equilibrium) result in a higher density of spiral growth hillocks with smaller radii of curvature. The spiral growth mode is first observed in the III‐N material system for the growth of MBE‐grown GaN and occurs under highly non‐equilibrium growth conditions. Adjusting the vapor phase supersaturation via growth parameters, and therefore the driving force, have effects on the morphology consistent with BCF theory. It is found that, over a wide compositional range, very smooth AlInGaN films can be achieved with a morphology dominated by densely packed spiral growth hillocks. For very high AlN crystal fraction, high V/III ratio, or low temperature, the AlInGaN films exhibited a 2‐D island nucleation growth mode. Abstract : This paper presents an analysis of AlInGaN surface morphology under a systematic variation of growth conditions, with an analysis based upon the thermodynamic crystal growth theory originally developed by Burton, Cabrera, and Frank. Three distinct growth modes within the AlInGaN compositional range are identified. Constraints and limitations upon the AlIinGaN growth window are provided.