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4. Enhanced temperature characteristic of InGaN/GaN laser diodes with uniform multiple quantum wells. (16th November 2015)

8. Increase of photogenerated carriers in thick quantum wells in InGaN solar cells verified by laser-assisted capacitance-voltage measurement. (25th April 2017)

9. Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 ≤ x ≤ 0.104). (January 2018)

10. Influence of hydrogen impurity on the resistivity of low temperature grown p-AlxGa1-xN layer (0.08 ≤ x ≤ 0.104). (January 2018)