Enhanced temperature characteristic of InGaN/GaN laser diodes with uniform multiple quantum wells. (16th November 2015)

• Record Type: Journal Article
• Authors: Wen, Pengyan; Zhang, Shuming; Li, Deyao; Liu, Jianping; Zhang, Liqun; Su, Xujun; Zhou, Kun; Tian, Aiqin; Zeng, Chang; Jiang, Desheng; Liu, Zongshun; Yang, Hui
• Is Part Of: Semiconductor science and technology. Volume 30:Number 12(2015:Dec.)
• Publication Date: 2015-11-16
• Subjects: InGaN/GaN laser diodes -- temperature characteristic -- multiple quantum well; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/12/125015
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Temperature-dependent electroluminescence (EL) of two high-power blue InGaN/GaN laser diodes (LDs) is studied. An enhanced temperature characteristic is observed in one LD, having a smaller Shockley–Read–Hall non-radiative recombination coefficient and a smaller full-width-at-half-maximum (FWHM) of the spontaneous EL spectra. The scanning transmission electron microscopy image of this LD shows a better uniformity of the multiple quantum wells (MQWs), indicating that the uniform MQWs contribute to the stable temperature characteristic of the LD.