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You searched for: Author/Creator Jena, Debdeep

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1. (Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity. (3rd July 2019)

2. AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz. Issue 3 (20th March 2014)

8. Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene. (6th May 2015)

9. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy. Issue 7 (6th January 2016)

10. Degradation Mechanisms of GaN‐Based Vertical Devices: A Review. Issue 7 (22nd January 2020)