Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors. (20th January 2015)

• Record Type: Journal Article
• Authors: Ma, Nan; Jena, Debdeep
• Is Part Of: 2D materials. Volume 2:Number 1(2015)
• Publication Date: 2015-01-20
• Subjects: transition metal dichalcogenide (TMD) -- field-effect transistor (FET) -- quantum capacitance -- field-effect mobility; Graphene -- Periodicals; Materials science -- Periodicals; Nanostructured materials -- Periodicals; 620.115
• DOI: 10.1088/2053-1583/2/1/015003
• Languages: English
• ISSNs: 2053-1583

Abstract

Abstract: In this work, the consequence of the high band-edge density of states on the carrier statistics and quantum capacitance in transition metal dichalcogenide two-dimensional semiconductor devices is explored. The study questions the validity of commonly used expressions for extracting carrier densities and field-effect mobilities from the transfer characteristics of transistors with such channel materials. By comparison to experimental data, a new method for the accurate extraction of carrier densities and mobilities is outlined. The work thus highlights a fundamental difference between these materials and traditional semiconductors that must be considered in future experimental measurements.