1. An insight to mobility parameters for AOSTFTs, when the effect of both, localized and free carriers, must be considered to describe the device behavior. (November 2018) Authors: Hernandez-Barrios, Y.; Cerdeira, A.; Estrada, M.; Iñiguez, B. Journal: Solid-state electronics Issue: Volume 149(2018) Page Start: 32 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Compact modelling for quantum confinement for InGaAs nanowire gate all around MOSFET. Issue 23 (1st November 2018) Authors: Abdelmoneam, A.; Iñiguez, B. Journal: Electronics letters Issue: Volume 54:Issue 23(2018) Page Start: 1348 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors. (September 2017) Authors: Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B. Journal: Solid-state electronics Issue: Volume 135(2017) Page Start: 43 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. DC self-heating effects modelling in SOI and bulk FinFETs. Issue 4 (April 2015) Authors: González, B.; Roldán, J.B.; Iñiguez, B.; Lázaro, A.; Cerdeira, A. Journal: Microelectronics journal Issue: Volume 46:Issue 4(2015) Page Start: 320 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Experimentally verified drain‐current model for variable barrier transistor. Issue 17 (5th August 2015) Authors: Moldovan, O.; Lime, F.; Barraud, S.; Smaani, B.; Latreche, S.; Iñiguez, B. Journal: Electronics letters Issue: Volume 51:Issue 17(2015) Page Start: 1364 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Full capacitance model, considering the specifics of amorphous oxide semiconductor thin film transistors structures. (June 2019) Authors: Cerdeira, A.; Estrada, M.; Hernandez-Barrios, Y.; Hernandez, I.; Iñiguez, B. Journal: Solid-state electronics Issue: Volume 156(2019) Page Start: 16 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Large-Signal DG-MOSFET Modelling for RFID Rectification. (26th October 2016) Authors: Rodríguez, R.; González, B.; García, J.; Lázaro, A.; Iñiguez, B.; Hernández, A. Other Names: Bonilla Luis L. Academic Editor. Journal: Advances in condensed matter physics Issue: Volume 2016(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗