Crystalline-like temperature dependence of the electrical characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors. (September 2017)

• Record Type: Journal Article
• Authors: Estrada, M.; Hernandez-Barrios, Y.; Cerdeira, A.; Ávila-Herrera, F.; Tinoco, J.; Moldovan, O.; Lime, F.; Iñiguez, B.
• Is Part Of: Solid-state electronics. Volume 135(2017)
• Page Start: 43
• Page End: 48
• Publication Date: 2017-09
• Subjects: a-IGZO TFTs -- Conduction mechanism -- Drain current temperature dependence; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2017.06.030
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Crystalline-like behavior in IGZO TFTs, when trapping is reduced. Effect of reducing the density of states and its characteristic temperature. Reduction of the drain current with the increase of temperature in IGZO TFTs. Abstract: A crystalline-like temperature dependence of the electrical characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) is reported, in which the drain current reduces as the temperature is increased. This behavior appears for values of drain and gate voltages above which a change in the predominant conduction mechanism occurs. After studying the possible conduction mechanisms, it was determined that, for gate and drain voltages below these values, hopping is the predominant mechanism with the current increasing with temperature, while for values above, the predominant conduction mechanism becomes percolation in the conduction band or band conduction and IDS reduces as the temperature increases. It was determined that this behavior appears, when the effect of trapping is reduced, either by varying the density of states, their characteristic energy or both. Simulations were used to further confirm the causes of the observed behavior.