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1. A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition. Issue 5 (1st April 2021)

2. A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition. Issue 5 (1st April 2021)

5. High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor. Issue 37 (8th September 2020)

7. Hollow Cathode Plasma (HCP) Enhanced Atomic Layer Deposition of Silicon Nitride (SiNx) Thin Films Using Pentachlorodisilane (PCDS). (23rd April 2019)