Inductively Coupled Plasma Reactive Ion Etching of Magnetic Tunnel Junction Stacks in a CH3COOH/Ar Gas. (1st January 2015)

• Record Type: Journal Article
• Authors: Garay, Adrian Adalberto; Choi, Ji Hyun; Hwang, Su Min; Chung, Chee Won
• Is Part Of: ECS Solid State Letters. Volume 4:Number 10(2015)
• Page Start: P77
• Page End: P79
• Publication Date: 2015-01-01
• Subjects: CH3COOH gas -- inductively coupled plasma reactive ion etching -- magnetic random access memory -- Magnetic tunnel junctions (MTJ) stacks etching
• DOI: 10.1149/2.0071510ssl
• Languages: English
• ISSNs: 2162-8750

Abstract

Abstract : The etch characteristics of hard masked MTJ (Magnetic Tunnel Junctions) stacks were investigated using inductively coupled plasma reactive ion etching in a CH3 COOH/Ar gas mixture as a function of gas mixture concentration and etch time. A high degree of anisotropy in the etch profile and fast etch rates were achieved when the MTJ stacks were etched in the CH3 COOH/Ar gas mixture. When etched in 25% CH3 COOH for 3 min, a stack: space ratio of 1:1 was obtained and EDS analysis showed no significant redeposition along the sidewall. A high degree of anisotropy was accomplished without redepositions or etch residues.