Author/Creator: Hwang, Cheol Seong - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Hwang, Cheol Seong

1. 2D Electron Gas at the Interface of Atomic‐Layer‐Deposited Al2O3/TiO2 on SrTiO3 Single Crystal Substrate. (21st October 2018)

Authors:: Lee, Hyun Jae; Moon, Taehwan; An, Cheol Hyun; Hwang, Cheol Seong
Journal:: Advanced Electronic Materials
Issue:: Volume 5:Number 1(2019)
Page Start:: n/a
Record Type:: Journal Article
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2. 2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface (Adv. Electron. Mater. 6/2020). (4th June 2020)

Authors:: Moon, Taehwan; Lee, Hyun Jae; Hyun, Seung Dam; Kim, Baek Su; Kim, Ho Hyun; Hwang, Cheol Seong
Journal:: Advanced Electronic Materials
Issue:: Volume 6:Number 6(2020)
Page Start:: n/a
Record Type:: Journal Article
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3. 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory. (18th October 2012)

Authors:: Kim, Gun Hwan; Lee, Jong Ho; Ahn, Youngbae; Jeon, Woojin; Song, Seul Ji; Seok, Jun Yeong; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Joo; Hwang, Cheol Seong
Journal:: Advanced functional materials
Issue:: Volume 23:Number 11(2013)
Page Start:: 1440
Record Type:: Journal Article
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4. A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption. (5th March 2020)

Authors:: Woo, Kyung Seok; Wang, Yongmin; Kim, Yumin; Kim, Jihun; Kim, Woohyun; Hwang, Cheol Seong
Journal:: Advanced Electronic Materials
Issue:: Volume 6:Number 5(2020)
Page Start:: n/a
Record Type:: Journal Article
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5. A crossbar resistance switching memory readout scheme with sneak current cancellation based on a two-port current-mode sensing. (31st October 2016)

Authors:: Bae, Woorham; Yoon, Kyung Jean; Hwang, Cheol Seong; Jeong, Deog-Kyoon
Journal:: Nanotechnology
Issue:: Volume 27:Number 48(2016)
Page Start:
Record Type:: Journal Article
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6. A High‐Speed True Random Number Generator Based on a CuxTe1−x Diffusive Memristor. (22nd July 2021)

Authors:: Woo, Kyung Seok; Kim, Jaehyun; Han, Janguk; Choi, Jin Myung; Kim, Woohyun; Hwang, Cheol Seong
Journal:: Advanced intelligent systems
Issue:: Volume 3:Number 7(2021)
Page Start:: n/a
Record Type:: Journal Article
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7. A High‐Speed True Random Number Generator Based on a CuxTe1−x Diffusive Memristor. (23rd June 2021)

Authors:: Woo, Kyung Seok; Kim, Jaehyun; Han, Janguk; Choi, Jin Myung; Kim, Woohyun; Hwang, Cheol Seong
Journal:: Advanced intelligent systems
Issue:: Volume 3:Number 7(2021)
Page Start:: n/a
Record Type:: Journal Article
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8. A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View. (3rd July 2014)

Authors:: Seok, Jun Yeong; Song, Seul Ji; Yoon, Jung Ho; Yoon, Kyung Jean; Park, Tae Hyung; Kwon, Dae Eun; Lim, Hyungkwang; Kim, Gun Hwan; Jeong, Doo Seok; Hwang, Cheol Seong
Journal:: Advanced functional materials
Issue:: Volume 24:Number 34(2014)
Page Start:: 5316
Record Type:: Journal Article
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9. A Stateful Logic Family Based on a New Logic Primitive Circuit Composed of Two Antiparallel Bipolar Memristors. (9th December 2019)

Authors:: Xu, Nuo; Park, Tae Gyun; Kim, Hae Jin; Shao, Xinglong; Yoon, Kyung Jean; Park, Tae Hyung; Fang, Liang; Kim, Kyung Min; Hwang, Cheol Seong
Journal:: Advanced intelligent systems
Issue:: Volume 2:Number 1(2020)
Page Start:: n/a
Record Type:: Journal Article
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10. A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory. Issue 36 (6th September 2016)

Authors:: Shao, Xing Long; Kim, Kyung Min; Yoon, Kyung Jean; Song, Seul Ji; Yoon, Jung Ho; Kim, Hae Jin; Park, Tae Hyung; Kwon, Dae Eun; Kwon, Young Jae; Kim, Yu Min; Hu, Xi Wen; Zhao, Jin Shi; Hwang, Cheol Seong
Journal:: Nanoscale
Issue:: Volume 8:Issue 36(2016)
Page Start:: 16455
Record Type:: Journal Article
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