2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface (Adv. Electron. Mater. 6/2020). (4th June 2020)

• Record Type: Journal Article
• Authors: Moon, Taehwan; Lee, Hyun Jae; Hyun, Seung Dam; Kim, Baek Su; Kim, Ho Hyun; Hwang, Cheol Seong
• Is Part Of: Advanced Electronic Materials. Volume 6:Number 6(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-06-04
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202070028
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : A transistor with a two‐dimensional electron gas (2DEG) channel at the hetero‐oxide structure is proposed by Cheol Seong Hwang and co‐workers in article number 1901286 . The negative voltage stress on the gate induces the migration of oxygen vacancies through the gate oxide, resulting in a feasible 2DEG conductance for transistor operation. This will contribute to understanding the principles of 2D electronic devices.