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You searched for: Author/Creator Hou, Keyu- Hou, Keyu [remove] 3
- 621.381 2
- Electronics -- Periodicals 2
- 530.5 1
- AlGaN‐GaN -- Si -- Al2O3 1
- MOS‐HEMT -- high threshold voltage -- metal‐oxide‐semiconductor high electron mobility transistors -- fluorine‐based treatment technique -- gate dielectric -- atomic layer deposition -- large input voltage swing -- electromagnetic interference immunity -- MOS‐HEMT power switches -- current 5.3 A -- voltage 400 V -- size 20 nm -- voltage 3.5 V -- voltage 402 V -- AlGaN‐GaN -- Si -- Al2O3 1
- MOS‐HEMT -- low specific on‐resistance -- minimal threshold hysteresis -- silicon substrate -- high‐electron mobility transistors -- metal‐oxide semiconductor -- gate dielectric films -- atomic layer deposition -- maximum saturate drain current -- power switching applications -- size 8 nm -- current 12.5 A -- voltage 0.05 V -- AlGaN‐GaN‐Si -- Al2O3 1
- Physics -- Congresses 1
- alumina -- aluminium compounds -- atomic layer deposition -- dielectric materials -- electromagnetic interference -- elemental semiconductors -- field effect transistor switches -- gallium compounds -- high electron mobility transistors -- III‐V semiconductors -- MOSFET -- power semiconductor switches -- silicon -- wide band gap semiconductors 1
- alumina -- gallium compounds -- silicon -- elemental semiconductors -- wide band gap semiconductors -- III‐V semiconductors -- high electron mobility transistors -- dielectric materials -- atomic layer deposition 1
- current -- size -- voltage -- voltage -- voltage 1