1. Are Extended Defects a Show Stopper for Future III-V CMOS Technologies. (May 2019) Authors: Claeys, C; Hsu, P-C; He, L; Mols, Y; Langer, R; Waldron, N; Eneman, G; Collaert, N; Heyns, M; Simoen, E Journal: Journal of physics Issue: Volume 1190(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Deep levels in silicon–oxygen superlattices. (21st December 2015) Authors: Simoen, E; Jayachandran, S; Delabie, A; Caymax, M; Heyns, M Journal: Semiconductor science and technology Issue: Volume 31:Number 2(2016:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Switching mechanism in two-terminal vanadium dioxide devices. (27th March 2015) Authors: Radu, Iuliana P; Govoreanu, B; Mertens, S; Shi, X; Cantoro, M; Schaekers, M; Jurczak, M; De Gendt, S; Stesmans, A; Kittl, J A; Heyns, M; Martens, K Journal: Nanotechnology Issue: Volume 26:Number 16(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Trap-assisted tunnelling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p+n junction. (May 2019) Authors: Hsu, P C (Brent); Simoen, E; Eneman, G; Merckling, C; Alian, A; Langer, R; Collaert, N; Heyns, M Journal: Journal of physics Issue: Volume 1190(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗