Author/Creator: He, Chao-hui - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator He, Chao-hui

1. 3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment. Issue 8 (July 2015)

Authors:: Zhang, Jin-xin; He, Chao-hui; Guo, Hong-xia; Tang, Du; Xiong, Cen; Li, Pei; Wang, Xin
Journal:: Microelectronics and reliability
Issue:: Volume 55:Issue 8(2015)
Page Start:: 1180
Record Type:: Journal Article
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2. Investigation of enhanced low dose rate sensitivity in SiGe HBTs by 60Co γ irradiation under different biases. (May 2018)

Authors:: Zhang, Jin-xin; Guo, Qi; Guo, Hong-Xia; Lu, Wu; He, Chao-hui; Wang, Xin; Li, Pei; Wen, Lin
Journal:: Microelectronics and reliability
Issue:: Volume 84(2018)
Page Start:: 105
Record Type:: Journal Article
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3. Simulation of substrate contact effects on heavy ion-induced current transient in SiGe HBT. (April 2019)

Authors:: Wei, Jia-nan; He, Chao-hui; Li, Pei; Li, Yong-hong; Guo, Hong-xia
Journal:: Microelectronics and reliability
Issue:: Volume 95(2019)
Page Start:: 28
Record Type:: Journal Article
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4. Single event effects in commercial FRAM and mitigation technique using neutron-induced displacement damage. (January 2019)

Authors:: Wei, Jia-nan; Guo, Hong-xia; Zhang, Feng-qi; He, Chao-hui; Ju, An-an; Li, Yong-hong
Journal:: Microelectronics and reliability
Issue:: Volume 92(2019)
Page Start:: 149
Record Type:: Journal Article
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