Single event effects in commercial FRAM and mitigation technique using neutron-induced displacement damage. (January 2019)

• Record Type: Journal Article
• Authors: Wei, Jia-nan; Guo, Hong-xia; Zhang, Feng-qi; He, Chao-hui; Ju, An-an; Li, Yong-hong
• Is Part Of: Microelectronics and reliability. Volume 92(2019)
• Page Start: 149
• Page End: 154
• Publication Date: 2019-01
• Subjects: Ferroelectric random access memory -- Single event effect -- Transient micro-latch-up -- Neutron irradiation; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.12.004
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The single event effects (SEE) in commercial Ferroelectric Random Access Memory (FRAM) were investigated using heavy-ion and pulsed laser. Stable data upsets affecting one to several rows and transient data upsets affecting hundreds to even thousands of rows were both observed, and the corresponding sensitive regions were identified. Further research provides evidence that the transient micro-latch-up event in the peripheral circuits based on complementary metal oxide semiconductor (CMOS) process is a main cause of the transient data upsets. Moreover, neutron irradiation is performed in order to mitigate the upsets caused by transient micro-latch-up. Due to the reduction of the current gains of the parasitic bipolar transistors by neutron-induced displacement damage, transient micro-latch-up as well as the resulting data upsets was suppressed. Highlights: Transient upsets and two types of stable upsets were observed. The sensitive region for each type of the upsets was identified by pulsed laser. Micro-latch-up in peripheral elements is the main reason of transient upsets. Neutron-induced displacement damage can mitigate the transient upsets.